基于应变梯度理论的微尺度蜂窝等效模量计算方法

本文提出了一种新的能够计及尺度效应的微纳米蜂窝等效模量的计算方法。将一种单参数应变梯度理论引入到本构方程当中,并基于能量等效原理推导了蜂窝面内等效模量地计算公式。算例分析表明,本文方法能够有效地计及尺度效应对蜂窝等效模量的影响。尺度效应与胞壁厚度和长度的值都有关,当胞壁厚度较小时,尺度效应显著,本文方法预测的模量会明显高于传统方法;而当胞壁厚度较大时,尺度效应变得微弱乃至可以忽略不计。但如果胞壁的长度/厚度比很大,则面内等效模量会趋近于0,此时是否考虑尺度效应意义不大。     

有机张力半导体及其光电特性

分子张力作为空间设计的重要组成部分正成为调控有机半导体的重要手段。由于分子内产生的拉伸张力、扭曲/弯曲张力以及空间张力而导致p轨道排布重组和构型构象结构发生变化,最近各种几何与拓扑结构的高张力有机半导体材料相继被报道,这使得高张力有机半导体材料成为有机电子领域研究的焦点。为了进一步梳理分子张力在有机半导体材料中扮演的角色与价值,该综述从分子张力的类型、实验与理论量化以及可视化出发,总结了高张力共轭芳烃的分子设计策略、与其光电性能分子张力之间的关系,以及这类新兴材料在光电领域的应用。最后,对高张力共轭芳烃的研究前景进行了展望,阐述了该类材料所面临的机遇与挑战。     

Skyrmion transport driven by pure voltage generated strain gradient

The magnetic skyrmion transport driven by pure voltage-induced strain gradient is proposed and studied via micromagnetic simulation. Through combining the skyrmion with multiferroic heterojunction, a voltage-induced uniaxial strain gradient is adjusted to move skyrmions. In the system, a pair of short-circuited trapezoidal top electrodes can generate the symmetric strain. Due to the symmetry of strain, the magnetic skyrmion can be driven with a linear motion in the middle of the nanostrip without deviation. We calculate the strain distribution generated by the trapezoidal top electrodes pair, and further investigate the influence of the strain intensity as well as the strain gradient on the skyrmion velocity. Our findings provide a stable and low-energy regulation method for skyrmion transport.     

Effect of biaxial strain and hydrostatic pressure on the magnetic properties of bilayer CrI3

Two-dimensional van der Waals magnetic materials are intriguing for applications in the future spintronics devices, so it is crucial to explore strategy to control the magnetic properties. Here, we carried out first-principles calculations and Monte Carlo simulations to investigate the effect of biaxial strain and hydrostatic pressure on the magnetic properties of the bilayer CrI₃. We found that the magnetic anisotropy, intralayer and interlayer exchange interactions, and Curie temperature can be tuned by biaxial strain and hydrostatic pressure. Large compressive biaxial strain may induce a ferromagneticto-antiferromagnetic transition of both CrI₃ layers. The hydrostatic pressure could enhance the intralayer exchange interaction significantly and hence largely boost the Curie temperature. The effect of the biaxial strain and hydrostatic pressure revealed in the bilayer CrI₃ may be generalized to other two-dimensional magnetic materials.     

Combining Complex and Radial Slave Boson Fields within the Kotliar–Ruckenstein Representation of Correlated Impurities

The gauge symmetry group of any slave boson representation allows to gauge away the phase of bosonic fields. One benefit of this radial field formulation is the elimination of spurious Bose condensations when saddle-point approximation is performed. Within the Kotliar–Ruckenstein representation, three of the four bosonic fields can be radial while the last one has to remain complex. In this work, the procedure to carry out the functional integration involving constrained fermionic fields, complex bosonic fields, and radial bosonic fields is presented. The correctness of the representation is verified by exactly evaluating the partition function and the Green's function of the Hubbard model in the atomic limit.     

砂岩方梁断裂过程区范围的实验确定方法

裂纹前端的断裂过程区是引起岩石非线性断裂及尺寸效应的主要原因。利用数字图像相关技术对砂岩开展了三点弯曲梁实验,获得观测区域高精度的全场位移和应变数据,根据断裂韧带区域水平位移和水平应变的分布特征,结合裂尖岩石颗粒变化的微观分析,提出采用裂纹尖端水平位移波动性和水平应变突变性所得到的波动系数和水平应变突变值,确定断裂过程区形状和临界尺寸的方法。结果表明:砂岩断裂过程区的形状为不规则的狭长带状区域,断裂过程区的临界长度为11~13mm,临界宽度为1.58~2.36mm。断裂过程区区域内形变在趋向裂尖时呈指数增加,但其单位区域内的形变增量呈波动状态。该方法能够更加准确判断岩石断裂过程区的范围,有助于分析岩石的非线性断裂特性。     

Non-Abelian gauge potentials driven localization transition in quasiperiodic optical lattices

Derived from quantum waves immersed in an Abelian gauge potential, the quasiperiodic Aubry-André-Harper (AAH) model is a simple yet powerful Hamiltonian to study the Anderson localization of ultracold atoms. Here, we investigate the localization properties of ultracold atoms in quasiperiodic optical lattices subject to a non-Abelian gauge potential, which are depicted by non-Abelian AAH models. We identify that the non-Abelian AAH models can bear the self-duality. We analyze the localization of such non-Abelian self-dual optical lattices, revealing a rich phase diagram driven by the non-Abelian gauge potential involved: a transition from a pure delocalization phase, then to coexistence phases, and finally to a pure localization phase. This is in stark contrast to the Abelian counterpart that does not support the coexistence phases. Our results establish the connection between localization and gauge symmetry, and thus comprise a new insight on the fundamental aspects of localization in quasiperiodic systems, from the perspective of non-Abelian gauge potential.     

利用电磁法研究HMX与TATB混合钝感炸药的冲击起爆特性

为研究含有少量奥克托金(HMX)且以三氨基三硝基苯(TATB)为基的高能钝感炸药PBX-3的冲击起爆反应增长规律,采用火炮驱动蓝宝石飞片的方法和铝基组合式电磁粒子速度计技术进行了一维平面冲击实验。通过实验测量撞击表面及内部不同深度处的冲击波后粒子速度,得到PBX-3炸药的Hugoniot关系。根据冲击波示踪器所测数据绘制了炸药到爆轰的时间-距离(x-t)图,获得了反映炸药冲击起爆性能的Pop关系。将入射压力为12.964 GPa时达到爆轰的6条速度曲线修整成相同零点,通过读取6条曲线的分离点即反应区末端的C-J点,计算出化学反应区时间和宽度。     

Efficient Quantum Dot Light-Emitting Diodes Based on Well-Type Thick-Shell CdxZn1−xS/CdSe/CdyZn1−yS Quantum Dots

Device grade quantum dots (QDs) require QDs ensembles to retain their original superior optical properties as in solution. QDs with thick shells are proven effective in suppressing the inter-dot interaction and preserving the emission properties for QDs solids. However, lattice strain–induced defects may form as the shell grows thicker, resulting in a notable photoluminescence quenching. Herein, a well-type Cd_xZn_1−xS/CdSe/Cd_yZn_1−yS QDs is proposed, where ternary alloys CdZnS are adopted to match the lattice parameter of intermediate CdSe by separately adjusting the x and y parameters. The resultant thick-shell Cd_0.5Zn_0.5S/CdSe/Cd_0.73Zn_0.27S QDs reveal nonblinking properties with a high PL QY of 99% in solution and 87% in film. The optimized quantum dot light-emitting diodes (QLEDs) exhibit a luminance of 31547.5 cd m⁻² at the external quantum efficiency maximum of 21.2% under a bias of 4.0 V. The shell thickness shows great impact on the degradation of the devices. The T₅₀ lifetime of the QLEDs with 11.2 nm QDs reaches 251 493 h, which is much higher than that of 6.5 and 8.4 nm QDs counterparts. The performances of the well-type thick-shell QLEDs are comparable to state-of-the-art devices, suggesting that this type of QDs is a promising candidate for efficient optoelectronic devices.